Mechanical exfoliation WSe2 on SiO2/SiProduct Name Name: Mechanical exfoliation WSe2 on SiO2 Si Product Overview Mechanical stripping of silicon oxide silicon substrate single layer molybdenum disulfide is a kind of single layer film material prepared from molybdenum disulfide block by mechanical stripping. The mechanical stripping method, also known as the "tape stripping method", was first proposed by Novoselov et al in 2004 when preparing single layer graphene. This method uses the

Thickness:300-500 nm

forming cellulose nanocrystals

and a wide range of applications

It mainly grows atoms and molecules into nanoscale thin film and granular MoS2 under certain environmental conditions through chemical means

and then put it into the reactor at a higher temperature reaction preparation

Multiple active sites: During the preparation reaction process

This type of photoelectric switch has important applications in fields such as information processing and data storage

and there are pure silica

the bond angle is 120 °

solvent exfoliation method

Energy field: Titanium oxide nanofibers can be used in fields such as solar cells

Ingredient:Fe3O4